? 2005 ixys all rights reserved g = gate d = drain s = source tab = drain ds99423(09/05) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.5 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 1 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 1.9 ? pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet advance technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab) ixta 4n60p ixtp 4n60p ixty 4n60p v dss = 600 v i d25 = 4 a r ds(on) 1.9 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gss 30 v v gsm 40 v i d25 t c = 25 c4a i dm t c = 25 c, pulse width limited by t jm 10 a i ar t c = 25 c4a e ar t c = 25 c10mj e as t c = 25 c 300 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 18 ? p d t c = 25 c86w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g to-252 0.8 g to-252 aa (ixty)
ixys reserves the right to change limits, test conditions, and dimensions. ixta 4n60p ixtp 4n60p ixty 4n60p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 2.2 4.6 s c iss 635 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 65 pf c rss 5.7 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 10 ns t d(off) r g = 18 ? (external) 50 ns t f 20 ns q g(on) 13.0 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 6.0 nc q gd 4.0 nc r thjc 1.45 k/w r thck (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 4 a i sm repetitive 16 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 4 a 600 ns -di/dt = 100 a/ s pins: 1 - gate 2 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 to-252 aa outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2005 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 1 2 3 4 5 6 7 8 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 3. output characteristics @ 125 o c 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 0.5 1 1.5 2 2.5 3 3.5 4 012345678910 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig . 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 4a i d = 2a v gs = 10v fig. 6. drain current vs. case temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0123 45678 i d - amperes r d s ( o n ) - normalize d t j = 125 c t j = 25 c v gs = 10v ixta 4n60p ixtp 4n60p ixty 4n60p
ixys reserves the right to change limits, test conditions, and dimensions. ixta 4n60p ixtp 4n60p ixty 4n60p ixta 4n60p ixty 4n60p ixtp 4n60p fig. 11. capacitance 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 02468101214 q g - nanocoulombs v g s - volts v ds = 300v i d = 2a i g = 10ma fig. 7. input adm ittance 0 0.6 1.2 1.8 2.4 3 3.6 4.2 4.8 5.4 6 44.555.5 66.577.5 v g s - volts i d - amperes t j =125 c 25 c -40 c fig. 8. transconductance 0 1 2 3 4 5 6 7 8 9 10 01234567 i d - amperes g f s - siemens t j = -40 c 25 c 125 c fig. 9. source curre nt vs. source-to-drain voltage 0 2 4 6 8 10 12 14 0.40.50.60.70.80.9 1 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - c / w
? 2005 ixys all rights reserved fig. 13. maximum transient thermal resistance 0.1 1.0 10.0 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - c / w ixta 4n60p ixtp 4n60p ixty 4n60p
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